november 2004 ? 2012 fairchild semiconductor corporation fds6680a rev f2(w) fds6680a single n-channel, logic level, powertrench ? mosfet general description this n-channel logic level mosfet is produced using fairchild semiconductor?s advanced power trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. features ? 12.5 a, 30 v r ds(on) = 9.5 m ? @ v gs = 10 v r ds(on) = 13 m ? @ v gs = 4.5 v ? ultra-low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 i d drain current ? continuous (note 1a) 12.5 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1.0 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-case (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 package marking and ordering information device marking device reel size tape width quantity fds6680a fds6680a 13?? 12mm 2500 units fds6680a july 2012
fds6680a rev f2(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 25 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a v ds = 24 v, v gs = 0 v, t j =55 c 10 a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?4.9 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 12.5 a v gs = 4.5 v, i d = 10.5 a v gs = 10 v, i d = 12.5 a, t j =125 c 7.8 9.9 11.0 9.5 13 15 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 25 a g fs forward transconductance v ds = 15 v, i d = 12.5 a 64 s dynamic characteristics c iss input capacitance 1620 pf c oss output capacitance 380 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 160 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 1.3 ? switching characteristics (note 2) t d(on) turn?on delay time 10 19 ns t r turn?on rise time 5 10 ns t d(off) turn?off delay time 27 43 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 15 27 ns q g total gate charge 16 23 nc q gs gate?source charge 5 nc q gd gate?drain charge v ds = 15 v, i d = 12.5 a, v gs = 5 v 5.8 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.73 1.2 v t rr diode reverse recovery time i f = 12.5 a, d if /d t = 100 a/s 28 ns q rr diode reverse recovery charge 18 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fds6680a
fds6680a rev f2(w) typical characteristics 0 10 20 30 40 50 00.511.52 v ds , drain to source voltage (v) i d , drain current (a) v gs = 10v 4.5v 3.5v 3.0v 6.0v 4.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.5v 4.5v 5.0v 10v 4.0v 6.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 12.5a v gs = 10v 0.005 0.01 0.015 0.02 0.025 0.03 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 6.2a t a = 125 o c t a = 25 o c figure 3. on-resist ance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 1.522.533.54 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c -55 o c 25 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6680a
fds6680a rev f2(w) typical characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 12.5a v ds = 10v 15v 20v 0 600 1200 1800 2400 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c oss c rss f = 1 mhz v gs = 0 v c iss figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125 o c/w t a = 25 o c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e 0.01 0.02 0.0 5 0.1 0.2 d = 0. 5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6680a
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